Program outline – nanoquad

Mobility plan

Enrolled students will follow 1st year courses in Turin and 2nd year courses in Paris, fully exploiting the teaching and experimental facilities of three outstanding European Universities and enjoying a fascinating experience in a really international environment. The master thesis/stage will be done under the tutorship of teachers of either the Université de Paris or the Politecnico of Torino.

First Year Syllabus in Torino

EU 1st term (30 ECTS)

Materials and characterization for Micro and Nanotechnologies
Solid State Physics/ Electronic Devices
Modern Optics
Finite element modelling
Stochastic processes

EU 2nd term (30 ECTS)

Electronic transport in crystalline and organic semiconductors
Micro and nanoelectronic devices
Microelectronics and Micro/Nanosystems technologies
Physics of NanoBiosystems

Elective course at choice:

Advanced design for signal integrity and compliance
Bioinformatics
Nanomaterials and nanotechnologies for energy applications
Electromagnetic fields and biological tissues: effects and medical applications
Innovative wireless platforms for the internet of things

Second year Syllabus in Paris

EU 1st term (30 ECTS)

Electrons and phonons in nanostructures

Quantum theory of light

Advanced Solid State Physics

Photonic quantum devices

Electronic quantum devices

2D Materials

Nano-objects et atomic scale

Experimental project (3 weeks)

Visit of Laboratories

EU 2nd term (30 ECTS)

Quantum Computing

Quantum Communication

Nanomagnetism ans spintronics

Functional Materials

Internship

Electrons and phonons in nanostructures (3 ECTS)

Professors
Prof. C. Voisin (Prof. UP, LPENS),

Prof. E. Deleporte (Prof. ENS Cachan, LPQM),

Ass. Prof. Francesca Carosella (MCF UP, LPENS)

Program :

-Fundamentals of solid state physics:

Band structure and Bloch theorem

Density of states

Effective mass

Overview of phonons

-Envelope function approximation

-Electron – phonon interaction: weak coupling regime

Fermi golden rule

Rabi oscillations

Importance of energy loss in opto-electronic devices

-Electron – phonon interaction: strong coupling regime

Polarons in quantum dots

Energy relaxation within polaron framework

-Optical absorption in a bulk material:

Direct absorption, indirect absorption, selection rules

Excitons

-Optical absorption in a quantum well:

Interband and intraband transitions

Type I and type II quantum wells, superlattice

Excitonic effects

-Optical emission in bulk materials and quantum wells:

Einstein coefficients

Luminescence

Different kinds of experience: electroluminescence, photoluminescence, excitation spectroscopy, time-resolved photoluminescence

-Effect of an external electric field on heterostructure electronic states and optical properties

-Effect of an external magnetic field on heterostructure electronic states and optical properties

Examples of problem class:

Density of states and energy states calculation in various kind of heterostructures
Determination of electrons lifetime in presence of phonons
Calculation of absorption coefficient in a bulk material
Optical absorption in a quantum well
Landau levels and magnetoabsorption

Advanced Solid State Physics (3 ECTS)

Professors
Prof. A. Sacuto (Prof. UP, MPQ)

Prof. F. Sottile (Prof, LSI, École Polytechnique)

Prof. F. Sirotti (DR CNRS, PMC, École Polytechnique)

Program :

-Reminder of Solid State Physics and Introduction to the course

Electrons and nuclei, Born-Oppenheimer approximation, Bloch theorem, spin and k-points, magnetism (diamagnetic, paramagnetic, ferromagnetic, anti-ferromagnetic, etc.)

-Superconductivity

An introduction to Superconductivity: Introduction to a short story of superconductivity and its fascinating properties, the quest of very low temperature, the discovery of superconductivity, the high-Tc superconductors, their properties with experiments performed during the lecture

The Cooper’s model : bound electrons in a degenerate Fermi gaz, the superconducting gap

A first approach to the microscopic theory of Bardeen Cooper Schrieffer (BCS): description of the ground state, the BCS Hamiltonian, the energy of the ground state and the superconducting gap

Signatures of the superconductivity in some spectroscopy probes: tunnelling and ARPES, infrared and Raman, NMR

-Electronic structure: the ground-state

ground-state quantities (lattice parameters, phonons, Bulk modulus, phase transitions), the many-body problem: independent particles, Hartree and Hartree-Fock approaches, Koopmans’s theorem and self-interaction concerns, Density Functional Theory (theory, approximations and examples), Band-structure and Density of States, Absorption in DFT

-Photoemission spectroscopy

Energy and momentum conservation, ARPES, XPS, Spin-resolution, Bulk surfaces and interfaces, Cross sections, Experimental issues: Ultra High Vacuum, X-rays sources, Electron energy analyzers, Examples

-Green’s Functions theory I

The need for the Green’s function, spectral representation, the self-energy, Hedin’s equations, the GW approximations

quasiparticle and satellites, results and examples

-X-ray Absorption and Ellipsometry

Valence spectroscopy and ellipsometry, Core electrons: XAS, XANES, EXAFS, Magnetic systems: Linear and circular Dichroism, Applications

– Green’s Functions theory II

The need for the two-particle Green’s function, the Bethe-Salpeter equation, 4 points quantities, results and examples

– Scattering spectroscopies and TDDFT

Scattering process and the inverse dielectric function, electron energy loss, electron microscope, inelastic x-ray scattering, experimental resolution: energy, momentum, space, time, Time Dependent Density Functional Theory, linear response and polarizability, approximations and applications

Electronic quantum devices (3 ECTS)

Professors
Prof. P. Joyez (DR SPEC, CEA Saclay)

Prof. P. Lafarge (Prof. UP, MPQ)

Program :

– Rappels de physique des solides : structures de bandes, métaux, semiconducteurs, phonons, transport diffusif…

– Seconde quantification

– Transport quantique : longueurs caractéristiques, quantification de la conductance, formule de Landauer, bruit de courant dans les conducteurs quantiques, localisation…

– Electrons en champ magnétique : niveaux de Landau, effet Hall quantique entier, fractionnaire, états de bord.

– Supraconductivité : Théorie BCS, effet Josephson, supraconductivité mésoscopique, réflexion d’Andreev.

– Transport dans les nanotubes de carbone.

Nano-objects at the nanoscale (3 ECTS)

Professors
Prof. D. Alloyeau (CR CNRS, MPQ)

Prof. V. Repain (Prof. UP, MPQ)

Prof. H. Amara (Chercheur, Onera)

Program :

Electronic, magnetic and optical properties down to the molecular scale:

-Microscopes history and state-of-the-art optical microscopes: Diffraction principle, optical resolution, Beyond diffraction

-Near field microscopy: A brief history, General principle of working, Scanning Tunneling Microscope and Atomic Force Microscope, signal to noise and resolution

-Electronic properties : Local Density of States, Quantized levels and wavefunctions mapping, Superconductivity at the nanoscale

-Magnetic properties: Local Tunnel Magneto-Resistance, Single atom magnetism, superparamagnetism and non-collinear magnetism

-Optical properties: Optical Luminescence from a nanometer scale junction, Tip Enhanced Raman Scattering

Structure-related properties of nanomaterials:

– The atomic structure of nanomaterials: a key to understand and optimize their properties

-Revealing the atomic structure and the electronic properties of nanomaterials with a transmission electron microscope: Image and diffraction , Phase-contrast microscopy at the atomic scale (high-resolution TEM), Electron and X-ray spectroscopies, Plasmon mapping at the nanoscale

-Studying the dynamics of nanomaterials in realistic environments: In situ electron microscopy and X-ray scattering methods, Nucleation and growth phenomena, Life cycle of nanomaterials in biological media

Modlisation of structural and electronic properties of nanomaterials:

-Different approaches at atomic scale: DFT calculations, Tight-binding formalism (diagonalization scheme, order N method, Green function, second moment approximation …), Empirical potentials (Lennard Jones, EAM, MEAM, Brenner, Tersoff, …), Different types of atomic calculations (static, Molecular Dynamics, Monte Carlo, energy landscape exploration methods, …)

-Electronic properties of nano-objects: Carbon nanomaterials (nanotube, graphene), Green functions formalism, Carbon nanotubes (imaging molecular orbitals), Doped Graphene (DFT vs Tight-binding)

-Structural properties of nano-objects: Thermodynamic of nanoalloys (driving forces : size, surface energy, ordering tendency, …) empirical and semi-empirical approaches, Growth mechanisms (nanorod, carbon nanotube, graphene)

Visit of laboratories

Visits of different laboratories in Paris and Parisian region are organized on a weekly basis. This give the opportunity to students to be aware of the hot-topics in research activities in the domain of quantum devices, to have scientific exchange with internationally recognized researchers and research teams and finally to get informed on internship proposals.

Quantum Communication (3 ECTS)

Professors
Prof. E. Diamanti (DR CNRS, LIP6)

Prof. S. Ducci (Prof. UP, MPQ)

Program :

-The qubit and its states: quick review of the basic quantum formalism (kets, bras and density matrices), No cloning theorem and Wiesner’s unforgeable banknotes, Quantum Key Distribution and BB84 protocol

-Quantum Entanglement – Definition and some Properties : Formal definition (as non separable state), Apparent Heisenberg inequality violation, Link with partial trace, Entanglement detection for pure and mixed states, Entanglement monogamy and application to QKD, Partial transpose and its physical meaning

-Quantum Entanglement – Bell inequalities and Application: Entanglement is not a limitation of quantum formalism, Bell inequalities (mainly CHSH), GHZ Paradox, Some Entanglement application, The 4 Bell States, Quantum Dense Coding, Quantum Teleportation

-Devices for quantum information:

Experimental implementation of quantum information : challenges and some famous experiments.

Photon sources : Single photon sources and their characterization, Hanbury Brown and Twiss interferometry, colloidal and grown quantum dots, colored centers in diamonds,..

Entangled photon sources and their characterization : Bell inequality test, density matrix reconstruction, nonlinear dielectric crystals and fibers, quantum dots, semiconductor waveguides,…

-Single photon detectors : Photomultipliers, single photons avanlanche photodiodes, supraconducting detectors

-Quantum metrology : absolute detector calibration, absolute radiance measurement, polarization mode dispersion, quantum ellipsometry …

Functional Materials (3 ECTS)

Professor
Prof. S. Biermann (Prof. École Polytechnique, CPHT)

This course consists mainly of invited seminars given by international researchers on topics at the interface between fundamental and applied physics/materials science (i. e. Meta-Materials, 2d Materials for Valleytronics, 2d oxide heterostructures, Nanoparticles, battery materials, ….). The lectures are held at Ecole Polytechnique.

Quantum theory of light (3 ECTS)

Professors
Ass. Prof. E. Boulat (MCF UP,MPQ)

Ass. Prof. L. Lanco (MCF UP, C2N)

Program :

Free particle of Spin 1/2

Jauge invariance of Schroedinger equation ; Pauli Hamiltonian

Semiclassical theory of light – matter interaction

Electron-field interaction and Fermi golden rule ; transition rate

QUANTUM NATURE OF LIGHT : PHOTONS

Fock space

Operators : electric field, momentum, photon number

The Casimir effect

Special states of the electromagnetic field : coherent states, squeezed states

PHOTON EMISSION AND ABSORPTION

Hamiltonian electron-photon; revisiting the Fermi golden rule

Spontaneous and stimulated emission

Natural linewidth

Dipolar electric emission

Diffusion of a photon from an atom

Photonic quantum devices (3 ECTS)

Professors
Prof. C. Sirtori (Prof. ENS, LPENS)

Prof. A. Vasanelli (Prof. UP, LPENS)

Program :

BASICS OF OPTOELECTRONICS AND SEMICONDUCTOR PHOTONIC DEVICES

– Basics of semiconductor physics

Electrons in solids: wavefunctions, band structures, effective mass

Statistics of semiconductors: Fermi-Dirac, semi-classical approximation, free-carrier density

Semiconductor doping: donors and acceptors, temperature regimes

Optical absorption: matrix element and absorption coefficient in direct-bandgap semiconductors, joint density of states, phonons and absorption in indirect-bandgap semiconductors

Non-radiative recombination

– Basics of semiconductor devices

Transport in semiconductors: diffusion and conductivity, Drude and Boltzmann

Quasi-neutral approximation: rate equations in doped semiconductors, minority-carrier evolution, application to photocarrier injection and surface recombination

p-n junctions: space charge and band profile, I-V characteristics and Shockley approximation, quasi Fermi levels

Photovoltaic detectors

– When electric fields come into play

Perturbation of electronic states: enveloppe function approximation, Franz-Keldysh effect

Application to heterostructures: quantum wells, intersubband transitions, QWIPs

Modulators: Quantum Confined Stark effect, QCSE vs. FK, designs

Introduction to non-linear optics: coupled-wave equations, slowly-varying-amplitude approximation, second-order processes and wave-vector mismatch

Second-order non-linear optics in semiconductors: susceptibility enhancement, phase-matching schemes

-Light emission in semiconductors

Radiative recombination and photoluminescence spectrum

Light-Emitting Diodes: carrier lifetime, internal quantum yield, light extraction

Stimulated emission: absorption, optical gain and Bernard-Duraffourg inversion condition

Double-heterostructure laser: electron and photon confinement, threshold, processing

Quantum-well laser: separate confinement, interband absorption and gain in quantum wells, threshold, comparison with DH, structures

Introduction to quantum-cascade laser: unipolar scheme, active part, superlattices and injector design

-From optoelectronics to photonic devices

Distributed-feedback lasers: principle, mode coupling, DFB operation

Vertical-cavity surface-emitting lasers: principle, Bragg mirrors, cavity design, electrical injection

Introduction to photonic crystals: DBR as 1D photonic crystals, modes and band structures, 2D and 3D generalisation, application to integrated optics, analogy with electron states and limits

Application to light extraction: emission from a cavity, light extraction and refractive-index engineering

FABRICATION OF PHOTONIC DEVICES

-Introduction to semiconductor device processing

Growth : molecular beam epitaxy, MOCVD

Photolithography

Processing of devices : etching, metallisations, …

-Heteroepitaxy : the example of Germanium on Silicon

– Nanowires and nanostructures : growth and characterization

2D Materials (3 ECTS)

Professors
Prof. J. Lagoute (CR CNRS, MPQ)

Prof. Y. Gallais (Prof. UP, MPQ)

Program :

Since the discovery of graphene with its remarkable transport and optical properties, the field of two-dimensional crystals has flourished, and many materials can now be studied down to the single atomic layers. Compared to bulk materials two dimensional materials provide highly tunable platforms for novel functionalities and exotic opto-electronic phenomena. The goal of this course is to give an overview of this vibrant field by providing some basic concepts of two-dimensional materials (device fabrication, electronic and optical properties) and then focus on a selection of recent developments in the field (van der Waals heterostructures, defect engineering, di-chalcogenides, topological insulators…).

We will first review the basics of the physical properties of graphene with an emphasis on the properties of graphene-based devices and the means to characterize them. We will then introduce the physics of other two-dimensional materials like di-chalcogenides and black phosphorus which have been discovered more recently and whose optical and electrical properties differs from graphene. The course will end by an introduction to the unusual two-dimensional electronic states that forms at the surface of topological insulators.

-The Physics of graphene and its devices:

Introduction: graphene and its band-structure

Transport properties of graphene devices

Optical properties and application to opto-electronic devices

Local spectroscopies and defect engineering

Graphene based heterostructures and van der Waals engineering: concept and fabrication

-Beyond graphene: dichalcogenides, black phosphorus and topological insulators :

Introduction to dichalcogenides and their band structure in the 2D limit: the case of semiconducting MoS2

Spin and valley degrees of freedom in semiconducting dichalcogenide + proximity effect

Correlated states in metallic dichalcogenides: density wave and superconductivity

Black-phosphorus

Introduction to topological insulators

Experimental projects in nanosciences (6 ECTS)

Professors
Ass. Prof. M. L. Della Rocca (MCF UP, MPQ)

Ass. Prof. F. Raineri (MCF UP, C2N)

Ass. Prof. R. Braive (MCF UP, C2N)

In this original course, students will get trained with experimental techniques used in nanosciences. During the first three weeks of the Master, students will have to make an experimental project in the nanosciences field like the elaboration and characterization of metallic nanoparticles, the optic of semiconducting laser, the electronic conduction in atomic contacts or organic materials, nanotubes physics, quantum optics…

A specific nanoscience area dedicated to teaching will be available with free of use instruments like an atomic force microscope, a scanning tunnelling microscope, a transmission electron microscope or an optic microscope. All students will also be initiated to clean room techniques during three days of practise.

Quantum Computing (3 ECTS)

Professors
Prof. P. Millman (DR CNRS, MPQ)

Prof. B. Laburthe (DR CNRS, LPL)

Program :

-Introduction to quantum computing: complexity classes, communication, universal gates, discrete and continuous variables, coding a qubit …

-Trapped ions for quantum computation: methods of trapping, cooling, interrogation, realization of elementary gates
-Detailed presentation of two algorithms: Shor algorithms and Grover algorithms, presentation of the project on IBM qbits
-Realization of the Shor’s algorithm with ions, the qbits supraconducteurs

-Error correcting codes

-Quantum computing with qbits supraconducteur using error correcting codes (experimental realization), other platforms for quantum computing (Si, NMR, photons …)

-Another approach: quantum simulation (discrete and continuous)

– Quantum simulation platforms: quantum gases (bulk or lattices), cold Rydberg atoms in optical grippers, ions, supra, microwaves, polaritons …

Nanomagnetism and spintronics (3 ECTS)

Professors
Prof. H. Jaffres (Prof. École Plytechnique, UMR CNRS -Thales)

Prof. P. Seneor (Prof. UPSaclay, UMR CNRS -Thales)

Program :

The ‘NanoMagnetism and Spintronics’ course targets the physics of Magnetism, of Magnetism at the nanometer scale (NanoMagnetism) and the spin-dependant transport in magnetic Nanostructures, scientific discipline designated today as Spin Electronics.

– Fundamentals of orbital and spin localized magnetism in ionic systems

– Paramagnetic, ferromagnetic and antiferromagnetic orders

– Band-ferromagnetism of 3d transition metals, atomic exchange interactions.

– Spin-dependent transport in magnetic nanostructures (magnetic multilayers, nanowires, magnetic tunnel junctions) – Spin-dependent conduction in the diffusive regime, spin diffusion length and spin accumulation

– Giant MagnetoResistance (GMR) and Tunnel Magnetoresistance (TMR)

– Magneto-Coulomb effects with nanoparticules dispersed between ferromagnetic reservoirs

– Spin transfer effects in metallic nanopillars and magnetic tunnel junctions

Master thesis project (march to june) (18 ECTS)

The final four-month Master thesis project can be conducted in one of the academic or industrial laboratory supporting the formation or in another Lab in France or abroad.

The evaluation is based on a project report and an oral presentation.

Applications

Eligibilty criteria

This course is addressed to students that have got a valid bachelor-level degree in physical engineering, electronic engineering (device-oriented), physics, materials science, materials engineering. Special cases of strongly motivated students with a different background will be evaluated on the basis of the applicant’s skill and quality. Classes will be given in English.

The selection committee will evaluate prospective students on their academic background and their motivation letter. Language certificates and recommendation letters will be taken into account as well, if such items are included in the application documents. Please do not hesitate to contact us well ahead of the application deadline if you need an earlier evaluation of your eligibility to allow for sufficient time to obtain a visa and to handle other formalities.

Students can either apply to Politecnico di Torino or to Université de Paris.

Application procedure to Politecnico di Torino

Application to NANOQUAD program from POLITO side is different in dependence of the provenance of applicants, in view of the structure of the joint syllabus, whose first year is scheduled in Turin.

Students belonging to the Politecnico di Torino must be enrolled in the master (Laurea Magistrale) course “Nanotechnologies for ICTs (national program)” offered by the Faculty. They can apply and will be selected according to the standard procedure for outgoing students of the Politecnico, available at the following link:

https://didattica.polito.it/studiare_estero/attivita/outgoing.html

All other students coming from abroad should follow a specific online procedure called « Apply », recently set out by the Politecnico di Torino and addressed to all prospective incoming students. Compete information is to be found at the following link:

http://apply.polito.it/.

NANOQUAD being a double-degree program done with international Partners, the following general information can be useful:

http://international.polito.it/admission/exchange_programmes/double_joint_degree

European and non European citizens – as well as Non-European students already living in Italy – who want to enroll to the NanoQuad program, should comply with the requirements listed in the following page:

http://international.polito.it/admission/prospective_students

Additional queries should be addressed to our Incoming Students Office (incoming.students@polito.it) indicating in your message the following keywords: NANOQUAD formation, Université de Paris – POLITO agreement.

Application procedure to Université Paris Diderot

EEA citizens

For Citizen of the countries belonging to European Economic Area :

Fill and send the application form before the end of March by mail to:

Maria Luisa DELLA ROCCA

Master « Physique et Applications » – Parcours de double diplôme « NanoQuad »

Université de Paris

Bâtiment Condorcet

10, rue A. Domon et L. Duquet

75205 Paris cedex 13

or by e-mail to :

maria-luisa.della-rocca@u-paris.fr

Download the application form : (mettre file à télécharger Application Form NanoQuad 2020.docx ou pdf)

Sous-sous rubrique : Citizens from countries not belonging to European Economic Area

If you live in one of the following countries, you must use the online CEF procedure.: http://www.campusfrance.org/en/page/a-country-using-cef-procedure (mettre link)

Algeria Argentina Benin Brazil Burkina Faso Cameroon Canada Chile China Colombia Congo (Brazzaville) Cote d’Ivoire Gabon Guinea India Japan Lebanon Madagascar Mali Marocco Mauritius Mexico Senegal Russia South Korea Syria Taiwan Tunisia Turkey USA Vietnam

The CEF mechanism offers prospective students the benefit of guidance and support at every step in the admission process, from application to enrollment. It even allows applicants to apply for their visa online and to track the progress of their electronic application.

Applicants open a personal account on the Web site of the CampusFrance office in their country of residence. From there they follow a paperless procedure that enables them to submit applications for admission and to dialog with the staff of the CampusFrance office in their country and with representatives of the institutions from which they hope to receive an offer of admission (whether under the DAP program or not).

We suggest you in any case to contact the director of the master program to manifest your intention to apply.

If your country is not included in the list above then you can use the direct application procédure. Download the appropriate application form by using the links below and send the completed document together with your CV, a motivation letter, and your most recent academic transcripts by email to maria-luisa.della-rocca@u-paris.fr (ou renvoyer à un contact) : (mettre fichier NanoQuad 2020.docx ou pdf)

Citizens from countries not belonging to European Economic Area

If you live in one of the following countries, you must use the online CEF procedure.: http://www.campusfrance.org/en/page/a-country-using-cef-procedure (mettre link)

We suggest you in any case to contact the director of the master program to manifest your intention to apply.